N CHANNEL MOS TYPE (RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER)

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER Output Power : Po ≥ 190 W (Min.) Drain Efficiency : ηD = 65 (Typ.) Frequency : f = 230 MHz Push−Pull Structure Package

文件：135.43 Kbytes 页数：3 Pages

TOSHIBA

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SILICON N-CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTEROutput Power : Po ≥ 190 W (Min.)\nDrain Efficiency : ηD = 65% (Typ.)\nFrequency : f = 230 MHz\nPush−Pull Structure Package

Toshiba

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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE

RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER • Output Power : Po ≥ 190 W (Min.) • Drain Efficiency : ηD = 65 (Typ.) • Frequency : f = 230 MHz • Push−Pull Structure Package

文件：132.66 Kbytes 页数：3 Pages

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TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

文件：189.87 Kbytes 页数：5 Pages

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TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

文件：189.87 Kbytes 页数：5 Pages

TOSHIBA

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FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for VHF TV BROADCAST TRANSMITTER

Toshiba

东芝