Silicon N-Channel MOS FET

Application High speed power switching Features • High breakdown voltage VDSS= 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver

文件：48.9 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching

文件：82.98 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

文件：307.66 Kbytes 页数：2 Pages

ISC

无锡固电

Nch Single Power Mosfet 1500V 2.5A 12000Mohm To-3P

MOSFETs suitable for switching (motor drive, etc.) and load switch applications. Low on-resistance, high-speed switching, and high-robustness. • High breakdown voltage VDSS = 1500 V\n• High speed switching\n• Low drive current\n• No secondary breakdown\n• Suitable for switching regulator, DC-DC converter and motor driver;

Renesas

瑞萨

Silicon N Channel MOS FET

Features • High breakdown voltage VDSS = 1500 V • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter and motor driver Application High speed power switching

文件：82.98 Kbytes 页数：7 Pages

RENESAS

瑞萨