SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

SILICON N-CHANNEL MOSFET HIGH SPEEED POWER SWITCHING

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HitachiHitachi Semiconductor

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1271 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

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NEC

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MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK1271 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • High voltage rating (VDSS = 1400 V) • Low on-state resistance RDS(on) = 4.0 Ω MAX. (VGS = 10 V, ID = 3 A) • Low Ciss Ciss = 18

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RENESAS

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MOS FIELD EFFECT TRANSISTOR

The 25K1272, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a5 V power source. The MOS FET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits. FEATURES - Dir

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RENESAS

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Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：401.92 Kbytes 页数：6 Pages

NEC

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Field Effect Transistor

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：39.83 Kbytes 页数：2 Pages

NEC

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MOS FIELD EFFECT TRANSISTOR

FEATURES - Directly driven by ICs havinga 5 V power source - Has low on-state resistance. Ros(on) = 1.00 2 MAX. @Vgs =40V, Ip = 05 A Ros(on) = 0.65 2 MAX. @Vgs = 10V, Ip = 05 A - Not necessary to_consider driving current because of its high input impedance. - Possible 0 reduce the number of

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N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：356.23 Kbytes 页数：6 Pages

NEC

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