2SK1306规格书应用电路市场行情日立Hitachi-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK1306	文件：34.24 Kbytes Page：6 Pages	Silicon N-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：34.24 Kbytes 页数：6 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SK1306	文件：83.61 Kbytes Page：7 Pages	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：83.61 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK1306	文件：296.99 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor 文件：296.99 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
2SK1306	文件：300 bytes Page：1 Pages	Transistors>Switching/MOSFETs	Renesas 瑞萨	Renesas
2SK1306-E	文件：83.61 Kbytes Page：7 Pages	Silicon N Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：83.61 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS

更多2SK1306供应商更新时间2025-12-24 9:41:00