Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：83.71 Kbytes 页数：7 Pages

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Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device – Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.98 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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isc N-Channel MOSFET Transistor

文件：309.65 Kbytes 页数：2 Pages

ISC

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Silicon N-Channel MOS FET

• Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device\n– Can be driven from 5 V source\n• Suitable for motor drive, DC-DC converter, power switch and solenoid driveApplication\nHigh speed power switching\n ;

HITACHI

日立

Transistors>Switching/MOSFETs

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瑞萨

Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：83.71 Kbytes 页数：7 Pages

RENESAS

瑞萨