2SK1305-E规格书应用电路供应价格瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SK1305-E	文件：82.69 Kbytes Page：7 Pages	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：82.69 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK1305	文件：34.21 Kbytes Page：6 Pages	Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：34.21 Kbytes 页数：6 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SK1305	文件：82.69 Kbytes Page：7 Pages	Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：82.69 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SK1305	文件：2.19249 Mbytes Page：8 Pages	N-Channel 100-V (D-S) MOSFET 文件：2.19249 Mbytes 页数：8 Pages	VBSEMI 微碧半导体	VBSEMI

更多2SK1305-E供应商更新时间2026-4-18 16:49:00