Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon N Channel MOS FET

• Low on-resistance\n• High speed switching\n• Low drive current\n• 4 V gate drive device\n- Can be driven from 5 V source\n• Suitable for motor drive, DC-DC converter, power switch and solenoid driveApplication\n  High speed power switching ;

Renesas

瑞萨

Silicon N-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：48.52 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon N Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：82.77 Kbytes 页数：7 Pages

RENESAS

瑞萨

N-Channel 100-V (D-S) MOSFET

文件：773.39 Kbytes 页数：6 Pages

VBSEMI

微碧半导体