Silicon P-Channel MOS FET

Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for low signal load switch. Application Low frequency power switching

文件：36.96 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

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Silicon P-Channel MOS FET

Features • Low on-resistance • Small package • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for low signal load switch. Application Low frequency power switching

文件：99.62 Kbytes 页数：6 Pages

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Transistors>Switching/MOSFETs

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TO263

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TO-220-3

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