丝印：T146；Package：TSMT3；Low frequency amplifier

Features 1) Collector current is large. (4A) 2) VCE(sat)≦ 250mV at IC= 2A / IB= 40mA 3) Complementary PNP Types : 2SB1707 Application LOW FREQUENCY AMPLIFIER

文件：38.84 Kbytes 页数：2 Pages

ROHM

罗姆

Low frequency amplifier

Features 1) A collector current is large. (3A) 2) VCE(sat) : max. 250mV At IC = 1.5A / IB = 30mA Application Low frequency amplifier Driver

文件：69.24 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：TL；Package：TSMT3；General purpose amplification (12V, 1.5A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat)≦200mV at IC=500mA/IB=25mA Application LOW FREQUENCY AMPLIFIER

文件：70.15 Kbytes 页数：3 Pages

ROHM

罗姆

General purpose amplification (30V, 1A)

Features 1) A collector current is large. 2) Collector saturation voltage is low. VCE(sat):max.350mV at IC=500mA/IB=25mA Application LOW FREQUENCY AMPLIFIER

文件：90.09 Kbytes 页数：3 Pages

ROHM

罗姆

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). APPLICATIONS • Designed for Color TV Horizontal Deflection Output Applications.

文件：188.87 Kbytes 页数：2 Pages

ISC

无锡固电

Color TV Horizontal Deflection Output Applications

Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：35.48 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Epitaxial Type (Darlington Power Transistor)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) • Zener diode included between collector and base

文件：131.37 Kbytes 页数：5 Pages

TOSHIBA

东芝

Silicon NPN transistor in a TO-220F Plastic Package.

文件：772.78 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Silicon NPN Triple Diffused Type (Darlington)

文件：141.56 Kbytes 页数：5 Pages

TOSHIBA

东芝