Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)

文件：119.98 Kbytes 页数：3 Pages

UTC

友顺

Solenoid Drive Applications Motor Drive Applications

文件：182.25 Kbytes 页数：5 Pages

TOSHIBA

东芝

Darlington Transistor

The UTC 2SD2686 is a silicon NPN epitaxial type transistors,including a zener diode between collector and base. it uses UTC’s advanced technology to provide customers high DC current gain. The UTC 2SD2686 is suitable for solenoid drive and motor drive applications.

UTC

友顺

Power transistor for low frequency applications

Feature：Darlington / Built-in damper diode / Built-in Zener diode\nPolarity：NPN\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 1 A \nCollector power dissipation (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1 W \nCollector-emitter voltage VCEO 60 V ;

Toshiba

东芝

SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)

文件：119.98 Kbytes 页数：3 Pages

UTC

友顺

SILICON NPN EPITAXIAL TYPE (DARLINGTON POWER)

文件：119.98 Kbytes 页数：3 Pages

UTC

友顺