Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose

文件：33.86 Kbytes 页数：1 Pages

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SILICON PNP EPITAXIAL PLANAR TRANSISTOR

Silicon PNP Triple Diffused Planar Transistor (Complement to type 2SD2642) Application : Audio, Series Regulator and General Purpose

文件：38.86 Kbytes 页数：1 Pages

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isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 110V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 5A, VCE= 4V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) B • Complement to Type 2SB1687 APPLICATIONS • Designed for a

文件：249.39 Kbytes 页数：2 Pages

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Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687)

Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1687) Application : Audio, Series Regulator and General Purpose

文件：33.01 Kbytes 页数：1 Pages

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Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process. • On-chip damper diode.

文件：29.32 Kbytes 页数：4 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Color TV horizontal deflection output applications.

文件：248.22 Kbytes 页数：2 Pages

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Color TV Horizontal Deflection Output Applications

NPN Triple Diffused Planar Silicon Transistor. Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：29.06 Kbytes 页数：4 Pages

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Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat)=3.0V(Max) @IC= 7.2A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：261.61 Kbytes 页数：2 Pages

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Color TV Horizontal Deflection Output Applications

Color TV Horizontal Deflection Output Applications Features • High speed. • High breakdown voltage(VCBO=1500V). • High reliability(Adoption of HVP process). • Adoption of MBIT process.

文件：28.99 Kbytes 页数：4 Pages

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三洋

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 700V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):3.0V(Max) @IC= 10.8A APPLICATIONS · Designed for power amplifier,high speed switching and regulated power supply applications.

文件：262.44 Kbytes 页数：2 Pages

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