Silicon NPN Epitaxial Type (Darlington Power Transistor)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA) • Zener diode included between collector and base

文件：131.37 Kbytes 页数：5 Pages

TOSHIBA

东芝

Micro Motor Drive, Hammer Drive Applications

文件：153.2 Kbytes 页数：5 Pages

TOSHIBA

东芝

Micro Motor Drive, Hammer Drive Applications

文件：153.2 Kbytes 页数：5 Pages

TOSHIBA

东芝

Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 2A TO92MOD

Toshiba Semiconductor and Storage

Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 2A TO92MOD

Toshiba Semiconductor and Storage

Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 2A TO92MOD

Toshiba Semiconductor and Storage