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2SD2114K

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor

文件:96.46 Kbytes 页数:5 Pages

ROHM

罗姆

2SD2114K

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO = 12V (Min.) 3) Low VCE(sat). VCE(sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:112.63 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2114K

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:132.83 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2114KS

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor

文件:96.46 Kbytes 页数:5 Pages

ROHM

罗姆

2SD2114KT146V

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:112.63 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2114KT146W

High-current Gain Medium Power Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:112.63 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2114KU

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:132.83 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2114KV

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:132.83 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2114KW

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件:132.83 Kbytes 页数:4 Pages

ROHM

罗姆

2SD2115

Power Bipolar Transistors

文件:55.8 Kbytes 页数:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

技术参数

  • AEC Qualified:

    NO

  • Pb Free:

    YES

  • Halide free:

    YES

  • Reach:

    YES

  • RoHS:

    YES

  • Marketing Status:

    Active

  • Polarity:

    NPN

  • V(BR)CEO(V)min.:

    20

  • IC(A):

    0.5

  • hFEmin.:

    300

  • hFEmax.:

    2700

  • VCE (sat)(V):

    0.4

  • IB(mA):

    20

  • fT(MHz)min.:

    350

  • PD(W)max.:

    0.2

  • TJ(°C)max.:

    150

  • TJ(°C)min.:

    -55

  • ECCN(US):

    EAR99

  • Category:

    双极型晶体管

供应商型号品牌批号封装库存备注价格
24+
TO-3
10000
全新
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
ROHM
17+
SOT252
6200
100%原装正品现货
询价
ROHM
24+
TO-252
4231
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
罗姆
24+
SOT23
3000
原装现货假一罚十
询价
ROHM
06PB
SOT23/SOT323
2599
全新原装进口自己库存优势
询价
ROHM
24+/25+
2500
原装正品现货库存价优
询价
ROHM
2016+
SOT-23
4750
只做原装,假一罚十,公司可开17%增值税发票!
询价
ROHM
23+
SOT23
3200
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
ROHM
25+
TO-252
8400
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
更多2SD211供应商 更新时间2025-12-1 16:00:00