High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain MediumPower Transistor (20V, 0.5A)

Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA)

文件：132.83 Kbytes 页数：4 Pages

ROHM

罗姆

High-current Gain Medium Power Transistor (20V, 0.5A)

文件：99.44 Kbytes 页数：5 Pages

ROHM

罗姆

Power Transistor

Features High DC current gain. High emitter-base voltage. Low VCE (sat).

文件：36.38 Kbytes 页数：1 Pages

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