2SD2114KS规格书行情报价罗姆ROHM-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SD2114KS	文件：96.46 Kbytes Page：5 Pages	High-current Gain Medium Power Transistor (20V, 0.5A) Features 1) High DC current gain. hFE= 1200 (Typ.) 2) High emitter-base voltage. VEBO=12V (Min.) 3) Low VCE (sat). VCE (sat)= 0.18V (Typ.) (IC/ IB= 500mA / 20mA) Structure Epitaxial planar type NPN silicon transistor 文件：96.46 Kbytes 页数：5 Pages	ROHM 罗姆	ROHM
2SD2114KU	文件：132.83 Kbytes Page：4 Pages	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件：132.83 Kbytes 页数：4 Pages	ROHM 罗姆	ROHM
2SD2114KV	文件：132.83 Kbytes Page：4 Pages	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件：132.83 Kbytes 页数：4 Pages	ROHM 罗姆	ROHM
2SD2114KW	文件：132.83 Kbytes Page：4 Pages	High-current Gain MediumPower Transistor (20V, 0.5A) Features 1) High DC current gain. hFE = 1200 (Typ.) 2) High emitter-base voltage. VEBO =12V (Min.) 3) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC / IB = 500mA / 20mA) 文件：132.83 Kbytes 页数：4 Pages	ROHM 罗姆	ROHM

更多2SD2114KS供应商更新时间2025-12-12 16:01:00