2SC5886

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5886

High-SpeedSwtchingApplications

High-SpeedSwtchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturation:VCE(sat)=0.22V(max) •High-speedswitching:tf=55ns(typ.)

2SC5886A

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SC5886A

iscSiliconNPNPowerTransistor

DESCRIPTION ·Highswitchingspeedtime ·Lowcollector-to-emittersaturationvoltage ·Fastswitchingspeed ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·High-SpeedSwitchingApplications ·DC/DCConverterApplications

2SC5886A

High-SpeedSwitchingApplications

High-SpeedSwitchingApplications DC/DCConverterApplications •HighDCcurrentgain:hFE=400to1000(IC=0.5A) •Lowcollector-emittersaturation:VCE(sat)=0.22V(max) •High-speedswitching:tf=95ns(typ.)