Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-state resistance. • Ultrahigh-speed switching. • Micaless package facilitating easy mounting.

文件：97.61 Kbytes 页数：3 Pages

SANYO

三洋

Fast Switching Speed

DESCRIPTION • Drain Current –ID=3A@ TC=25℃ • Drain Source Voltage- : VDSS= 450V(Min) • Fast Switching Speed APPLICATIONS • Designed for high voltage, high speed power switching

文件：61.5 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • Micaless package facilitating mounting.

文件：37.88 Kbytes 页数：4 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.0A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.33 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：853.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体