Ultrahigh-Speed Switching Applications

Features •Low ON-resistance. •Ultrahigh-speed switching. •Micaless package facilitating mounting.

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SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 7.0A@ TC=25℃ · Drain Source Voltage -VDSS= 450V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.32 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：852.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体