Silicon N-Channel Power F-MOS FET

■ Features ● Low ON-resistance RDS(on): RDS(on) = 0.4Ω (typ.) ● High-speed switching: tf = 44ns (typ.) ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation ■ Applications ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit

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PANASONIC

松下

Drain Current ?밒D=8A@ TC=25C

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ISC

无锡固电

Silicon N-Channel Power F-MOS FET

■ ● Low ON-resistance RDS(on): RDS(on) = 0.4Ω (typ.)\n● High-speed switching: tf = 44ns (typ.)\n● No secondary breakdown\n● High breakdown voltage, large allowable power dissipation■ Applications\n● Contactless relay\n● Diving circuit for a solenoid\n● Driving circuit for a motor\n● Control equipment\;

Panasonic

松下

TO-220

FUJI

富士通

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SOT23

RENESAS

瑞萨

上传：深圳市正纳电子有限公司