Silicon N-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter

文件：50.51 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter

文件：83.3 Kbytes 页数：7 Pages

RENESAS

瑞萨

Drain Current ?밒D=30A@ TC=25C

文件：67.41 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon N-Channel MOS FET

Application\nHigh speed power switching •  Low on-resistance\n•  High speed switching\n•  Low drive current\n•  Built-in fast recovery diode (trr= 120 ns)\n•  Suitable for motor control, switching regulator, DC-DC converter;

Renesas

瑞萨

Silicon N Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • Built-in fast recovery diode (trr= 120 ns) • Suitable for motor control, switching regulator, DC-DC converter

文件：83.3 Kbytes 页数：7 Pages

RENESAS

瑞萨