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2SK1530

NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION)

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

NCHANNELMOSTYPE(HIGHPOWERAMPLIFIERAPPLICATION)

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

High-PowerAmplifierApplication

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SK1530O

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530Y

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530-Y

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SK1530-YF

High-PowerAmplifierApplication

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SJ201

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

详细参数

  • 型号:

    2SK1530-Y(F)

  • 功能描述:

    MOSFET MOSFET N-CH 200V 12A TO-3PL

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Toshiba
07+/08+
TO-3P
123
询价
TOSHIBA
11+
138
原装正品香港现货
询价
TOS
1237+
50
原装现货海量库存欢迎咨询
询价
TOSHIBA
最新
138
原装正品 现货供应 价格优
询价
TOSHIBA
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
询价
TOSHIBA
23+
TO-3P
9526
询价
TOS
17+
TO-3P
6200
询价
TOSHIBA
23+
TO247
1321
特价库存
询价
SAY
16+
TO-3PL
10000
全新原装现货
询价
TOS
23+
TO-3P
10000
专做原装正品,假一罚百!
询价
更多2SK1530-Y(F)供应商 更新时间2024-4-28 16:30:00