Ultrahigh-Speed Switching Applications

Features • Low ON-resistance. • Ultrahigh-speed switching. • Micaless package facilitating mounting.

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SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 3.5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) =3.6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：320.13 Kbytes 页数：2 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：853.67 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体