Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications

文件：100.07 Kbytes 页数：3 Pages

SANYO

三洋

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 6Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：320.14 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：325.7 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 2.5A@ TC=25℃ · Drain Source Voltage -VDSS= 900V(Min) · Static Drain-Source On-Resistance -RDS(on) = 60Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

文件：320.14 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • Micaless package facilitating mounting.

文件：38.13 Kbytes 页数：4 Pages

SANYO

三洋

iscN-Channel MOSFET Transistor

文件：853.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

ONSEMI

安森美半导体