Old Company Name in Catalogs and Other Documents

DESCRIPTION The 2SD1005 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

文件：341.07 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

FEATURES ● High Collector to Base Voltage. ● Excellent DC Current Gain Linearity. ● Complements to PNP type 2SB804.

文件：150.35 Kbytes 页数：3 Pages

BILIN

银河微电

TRANSISTOR (NPN)

FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent DC Current Gain Linearity

文件：343.25 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent DC Current Gain Linearity

文件：1.20117 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN Silicon Epitaxia

Features ● World standard miniature package: SOT-89. ● High collector to base voltage: VCBO 100V. ● Excellent dc current gain linearity: hFE=80TYP. (VCE=2V, IC=500mA).

文件：52.27 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD1005 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.)

文件：211.74 Kbytes 页数：4 Pages

NEC

瑞萨

丝印：BW；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package High Breakdown Voltage Excellent DC Current Gain Linearity

文件：1.48222 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：HFE1；Package：SOT-89；NPN Medium Power Transistors

Features ● High current (max. 1 A). ● Low voltage (max. 80 V).

文件：669.22 Kbytes 页数：2 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

Plastic-Encapsulate Transistors

FEATURES • High Collector to Base Voltage. • Excellent DC Current Gain Linearity. • Complements to PNP type 2SB804.

文件：224.86 Kbytes 页数：2 Pages

HOTTECH

合科泰

1A , 100V NPN Plastic Encapsulated Transistor

FEATURES ● Small Flat Package ● High Breakdown Voltage ● Excellent DC Current Gain Linearity

文件：78.16 Kbytes 页数：1 Pages

SECOS

喜可士