N-channel MOS-FET

> Features - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Forward Transconductance > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters

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isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 35A@ TC=25℃ · Drain Source Voltage -VDSS= 30V(Min) · Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

iscN-Channel MOSFET Transistor

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ISC

无锡固电

N-channel MOS-FET(30V 0.022Ohm 35A 60W)

- High Current\n- Low On-Resistance\n- No Secondary Breakdown\n- Low Driving Power\n- High Forward Transconductance

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