Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.33 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.27 Kbytes 页数：2 Pages

ISC

无锡固电

TOSHIBA Transistor Silicon NPN Epitaxial Type

High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.1 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.17 V (max) • High-speed switching: tf = 85 ns (typ.)

文件：134.13 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Feature high-voltage: VCBO = 1600V. • High reliability (HVP process adopted). · MBIT process adopted.

文件：40.28 Kbytes 页数：3 Pages

SANYO

三洋

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Features • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：94.18 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：208.51 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial VHF/UHF wide band amplifier

Application • High power gain, Low noise figure at low power operation: |S21|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)

文件：208.51 Kbytes 页数：9 Pages

RENESAS

瑞萨

Silicon NPN epitaxial planar type

Silicon NPN epitaxial planar type For DC-DC converter ■ Features • Low collector-emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing

文件：81.18 Kbytes 页数：3 Pages

PANASONIC

松下

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

文件：195.54 Kbytes 页数：5 Pages

ISAHAYA

谏早电子