丝印：C5886；Package：SC-68；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed Swtching Applications

High-Speed Swtching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 55 ns (typ.)

文件：116.29 Kbytes 页数：5 Pages

TOSHIBA

东芝

丝印：C5886A；Package：SC-69；Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Speed Switching Applications

High-Speed Switching Applications DC/DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) • Low collector-emitter saturation: VCE (sat) = 0.22 V (max) • High-speed switching: tf = 95 ns (typ.)

文件：139.89 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High-Speed Switching Applications ·DC/DC Converter Applications

文件：290.94 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·High Speed Switching ·Low Saturation Voltage- : VCE(sat)= 0.4V(Max)@ (IC= 7A; IB= 0.35A) B ·Complement to Type 2SA2098 APPLICATIONS ·Relay drivers, lamp drivers, motor drivers.

文件：243.4 Kbytes 页数：2 Pages

ISC

无锡固电

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

文件：37.66 Kbytes 页数：5 Pages

SANYO

三洋

High-Current Switching Applications

High-Current Switching Applications Features • Adoption of MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. Applications • Relay drivers, lamp drivers, motor drivers.

文件：42.87 Kbytes 页数：5 Pages

SANYO

三洋

2SC5889

DC / DC Converter Applications Features • Adoption of MBIT process. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • Relay drivers, lamp drivers, motor drivers, strobes.

文件：39.46 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Epitaxial UHF / VHF wide band amplifier

Features • High gain bandwidth product: fT = 7.8 GHz typ. • High power gain and low noise figure; PG = 12 dB typ., NF = 1.0 dB typ. at f = 900 MHz • High collector power dissipation: Pc = 700 mW when using alumina ceramic board (25 x 60 x 0.7 mm) • High withstanding to ESD of collector to emit

文件：169.31 Kbytes 页数：16 Pages

RENESAS

瑞萨