丝印：EE；Package：SOT-323；For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

文件：195.54 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

文件：195.54 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION 2SC5814，2SC5815，2SC5816，2SC5817 is a super mini package silicon NPN epitaxial type transistor. It is designed for low frequency voltage amplify application. FEATURE ● Facilitates miniaturization and high-density mounting ● Excellent linearity of DC forward current gain ● Low colle

文件：195.54 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

High-Speed Switching Applications

High-Speed Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 400 to 1000 (IC = 0.15 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.12 V (max) • High-speed switching: tf = 45 ns (typ.)

文件：122.16 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

Application • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz

文件：147.22 Kbytes 页数：11 Pages

RENESAS

瑞萨

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.36 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.3 Kbytes 页数：2 Pages

ISC

无锡固电

Switching Regulator Applications

Switching Regulator Applications Features • High breakdown voltage. • High-speed switching. • Wide ASO. • Adoption of MBIT process.

文件：39.72 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.1A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.36 Kbytes 页数：2 Pages

ISC

无锡固电