NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package

文件：33.78 Kbytes 页数：1 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package

文件：344.03 Kbytes 页数：25 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package

文件：344.03 Kbytes 页数：25 Pages

RENESAS

瑞萨

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin lead-less minimold package

文件：33.78 Kbytes 页数：1 Pages

NEC

瑞萨

Silicon NPN Power Transistors

* With TO-3P(H)IS package * High voltage;high speed * Wide area of safe operation APPLICATIONS * For high voltage color display horizontal deflection output applications.

文件：250.14 Kbytes 页数：3 Pages

SAVANTIC

SMALL-SIGNAL TRANSISTOR

DESCRIPTION 2SC5804 is a super mini packageresin sealed silicon NPN epitaxial transistor, It is designed for low frequency application. Since it is a super-thin flat lead type package,a high-density mounting are possible. Complementary with 2SC3052. FEATURE ● Super-thin flat lead

文件：46.52 Kbytes 页数：2 Pages

ISAHAYA

谏早电子

SILICON NPN EPITAXIAL TYPE

DESCRIPTION 2SC5807 is a silicon NPN epitaxial Transistor. It designed with high collector current and high collector dissipation. FEATURE ● High collector current IC=5A ● Small collector to Emitter saturation voltage VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA) ● High collecto

文件：78.08 Kbytes 页数：5 Pages

ISAHAYA

谏早电子

Switching Power Supply Applications

Switching Power Supply Applications Features • High breakdown voltage. • High speed switching. • Wide ASO. • Adoption of MBIT process.

文件：34.22 Kbytes 页数：4 Pages

SANYO

三洋

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：276.27 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·DC Current Gain- : hFE= 20(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：295.33 Kbytes 页数：2 Pages

ISC

无锡固电