2SC5812资料datasheet下载供应代理日立-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC5812	文件：94.18 Kbytes Page：10 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Features • High power gain, Low noise figure at low power operation: \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 文件：94.18 Kbytes 页数：10 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SC5812	文件：208.51 Kbytes Page：9 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Application • High power gain, Low noise figure at low power operation: \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 文件：208.51 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SC5812WG-TR-E	文件：208.51 Kbytes Page：9 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Application • High power gain, Low noise figure at low power operation: \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) 文件：208.51 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS
2SC5812WG-TR-E	文件：300 bytes Page：1 Pages	Silicon NPN Epitaxial VHF/UHF wide band amplifier Application\n• High power gain, Low noise figure at low power operation:\n \|S21\|2 = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz)	Renesas 瑞萨	Renesas

更多2SC5812供应商更新时间2025-12-1 16:30:00