FORLOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION\n2SC5804 is a super mini packageresin sealed silicon NPN epitaxial transistor, It is designed for low frequency application.\nSince it is a super-thin flat lead type package,a high-density mounting are possible.\nComplementary with 2SC3052.FEATURE\n●  Super-thin flat lead type package. t

IDC

For Low Frequency Amplify Application Silicon NPN Epitaxial Type

DESCRIPTION\n2SC5807 is a silicon NPN epitaxial Transistor.\nIt designed with high collector current and high collector dissipation.FEATURE\n● High collector current IC=5A\n● Small collector to Emitter saturation voltage\n    VCE(sat)=0.25V TYP. (@IC=4A,IB=100mA)\n● High collector dissipation PC=500

IDC

Package：TO-243AA；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 20V 1.5A PW-MINI

Toshiba Semiconductor and Storage

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 3A MPT3

ROHM

罗姆

Package：TO-243AA；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 3A MPT3

ROHM

罗姆