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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC5507	文件：300.27 Kbytes Page：12 Pages	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：300.27 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
2SC5507-T2	文件：300.27 Kbytes Page：12 Pages	NPN SILICON RF TRANSISTOR NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz • Maximum stable power gain: MSG 文件：300.27 Kbytes 页数：12 Pages	RENESAS 瑞萨	RENESAS
2SC5507-T2	文件：91.73 Kbytes Page：12 Pages	NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Maximum stable power gain: MSG = 22 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA • fT = 25 GHz technology • Flat-lead 4-pin thin super mini-mold (t = 0.59 mm) 文件：91.73 Kbytes 页数：12 Pages	NEC 瑞萨	NEC
2SC5508	文件：106.78 Kbytes Page：16 Pages	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V 文件：106.78 Kbytes 页数：16 Pages	NEC 瑞萨	NEC
2SC5508	文件：229.94 Kbytes Page：10 Pages	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19 文件：229.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC5508-A	文件：229.94 Kbytes Page：10 Pages	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19 文件：229.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC5508-T2	文件：229.94 Kbytes Page：10 Pages	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19 文件：229.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC5508-T2	文件：106.78 Kbytes Page：16 Pages	NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB, Ga= 16 dB TYP. @f = 2 GHz, VCE= 2 V, IC= 5 mA • Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, V 文件：106.78 Kbytes 页数：16 Pages	NEC 瑞萨	NEC
2SC5508-T2-A	文件：229.94 Kbytes Page：10 Pages	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19 文件：229.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC5508-T2B	文件：229.94 Kbytes Page：10 Pages	NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) FEATURES • Ideal for low-noise, high-gain amplification applications • NF = 1.1 dB TYP., Ga = 16 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz • Maximum available power gain: MAG = 19 文件：229.94 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS

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技术参数

BVCEO(V)：
33
BVCBO(V)：
15
IC(A)：
0.035
HFE_MIN.：
50
HFE_MAX.：
100
HFE test_IC(mA)：
5
HFE test_VCE(V)：
2.0
ft (GHz)_TYP：
25
ft (GHz)test_VCE：
3
ft (GHz)test_IC(mA)：
30
ft (GHz)test_f(GHz)：
2
Package：
SOT-363

供应商	型号	品牌	批号	封装	库存	备注	价格
飞利飞科技有限公司	2SC5508	NEC	14+无铅	SOT-343	25700	优势产品,博盛微热卖!!!	询价
深圳市中飞凌科技有限公司	2SC5508	RENESAS	26+	SOT-343	360000	进口原装现货	询价
深圳诚思涵科技有限公司	2SC5508	NEC	16+	SOT-343	10000	进口原装现货/价格优势!	询价
深圳市一线半导体有限公司	2SC5508	NEC	24+	SOT-343SOT-323-4	6205	新进库存/原装	询价
深圳市粤科源兴科技有限公司	2SC5508	NEC	13+	NA	19258	原装分销	询价
齐创科技(上海,北京,青岛)有限公司	2SC5508	NEC	23+	SOT-343	30000	原装正品,假一罚十	询价
深圳市弘为电子有限公司	2SC5508	NEC	24+	SOT416	3000	原装现货假一罚十	询价
深圳市恒创达实业有限公司	2SC5508	NEC	17+	SOT-343	6200	100%原装正品现货	询价
深圳市振宏微科技有限公司	2SC5508	SOT-343	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市莱克讯科技有限公司	2SC5508	NEC	1922+	SOT-343	35689	原装进口现货库存专业工厂研究所配单供货	询价

更多2SC55供应商更新时间2026-1-29 15:01:00

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