Low-Voltage, Low-Current High-frequency Amplifier Applications

Low-Voltage, Low-Current High-frequency Amplifier Applications Features · Low voltage, low current operation : fT=5GHz typ. (VCE=1V, IC=1mA) : |S21e|2 =7dB typ (f=1GHz). : NF=2.6dB typ (f=1GHz). · Ultrasmall, slim flat-lead package. (1.4mm

文件：32.45 Kbytes 页数：3 Pages

SANYO

三洋

VHF to UHF OSC, High-Frequency Amplifier Applications

VHF to UHF OSC, High-Frequency Amplifier Applications Features · High gain : S21e2=10.5dB typ (f=1GHz). · High cutoff frequency : fT=5.2GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm×0.8mm×0.6mm)

文件：36.92 Kbytes 页数：4 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifier Applications

VHF to UHF Band OSC, High-Frequency Amplifier Applications Features • High gain : |S21e|2=10.5dB typ (f=1GHz). • High cut-off frequency : fT=5.2GHz typ. • Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm). • Halogen free compliance.

文件：54.29 Kbytes 页数：5 Pages

SANYO

三洋

VHF to UHF Low-Noise Wide-Band Amplifier Applications

VHF to UHF Low-Noise Wide-Band Amplifier Applications Features • Low noise : NF=1.1dB typ (f=1GHz). • High gain : |S21e|2=12dB typ (f=1GHz). • High cutoff frequency : fT=7.5GHz typ. • Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

文件：44.22 Kbytes 页数：5 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Amplifier and OSC Applications

VHF to UHF Low-Noise Amplifier and OSC Applications Features • Low noise : NF=1.1dB typ (f=1GHz). • High gain : |S21e|2=12dB typ (f=1GHz). • High cut-off frequency : fT=7.5GHz typ. • Ultrasmall, slim flat-lead package (1.4mm✕0.8mm✕0.6mm). • Halogen free compliance.

文件：57.89 Kbytes 页数：6 Pages

SANYO

三洋

丝印：C554；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Saturation Voltage High Speed Switching

文件：1.833 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

UHF to S Band Low-Noise Amplifier and OSC Applications

UHF to S Band Low-Noise Amplifier and OSC Applications Features · High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ (f=1GHz). · Low noise : NF=1.3dB typ (f=1GHz). · Small Cob : Cob=0.4pF typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

文件：30.9 Kbytes 页数：3 Pages

SANYO

三洋

UHF to S Band Low-Noise Amplifier Applications

UHF to S Band Low-Noise Amplifier Applications Features · Low noise : NF=1.2dB typ (f=2GHz). · High gain : S21e2=10dB typ (f=2GHz). · High cutoff frequency : fT=13GHz typ. · Ultrasmall, slim flat-lead package. (1.4mm × 0.8mm × 0.6mm)

文件：44.16 Kbytes 页数：5 Pages

SANYO

三洋

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

文件：46.77 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial VHF / UHF wide band amplifier

Features • Super compact package; (1.4 × 0.8 × 0.59mm) • Capable low voltage operation ; (VCE = 1V)

文件：173.91 Kbytes 页数：8 Pages

RENESAS

瑞萨