NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 370 V • High DC current gain: hFE = 60 (min) (IC = 0.2 A)

文件：197.51 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (SWITCHING REGULATOR, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER APPLICATIONS)

High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.8 A) • High collector breakdown voltage: VCEO = 400 V • High DC current gain: hFE = 40 (min) (IC = 0.2 A)

文件：196.79 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATIONS FOR INVERTER LIGHTING SYSTEM)

High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuits. (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V

文件：172.8 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM)

High-Speed Switching Application for Inverter Lighting System • Suitable for RCC circuit (guaranteed small current hFE) : hFE = 13 (min) (IC = 1 mA) • High speed: tr = 0.5 µs (max), tf = 0.3 µs (max) (IC = 0.24 A) • High breakdown voltage: VCEO = 400 V

文件：176.04 Kbytes 页数：4 Pages

TOSHIBA

东芝

High-Frequency Medium-Output Amplifier Applications

High-Frequency Medium-Output Amplifier Applications Features • High fT : (fT=3.5GHz typ). • Large current : (IC=300mA). • Large allowable collector dissipation (1.3W max).

文件：43.33 Kbytes 页数：5 Pages

SANYO

三洋

High-Frequency Medium-Output Amplifier Applications

NPN Epitaxial Planar Silicon Transistor Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

文件：82.02 Kbytes 页数：4 Pages

SANYO

三洋

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

文件：299.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

RF Transistor

Features • High fT : (fT=3.5GHz typ) • Large current : (IC=300mA) • Large allowable collector dissipation (1.3W max)

文件：299.98 Kbytes 页数：6 Pages

ONSEMI

安森美半导体