SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current. ● Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA

文件：2.97723 Mbytes 页数：4 Pages

JIANGSU

长电科技

Low Frequency Transistor

Features Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

文件：35.99 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Silicon General Purpose Transistor

FEATURES • High Current. • Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) • Complement of 2SC4738. Application • General Purpose Amplification.

文件：168.08 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：BX；Package：SOT-416；Low frequency transistor (12V, 0.5A)

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA Applications For switching For muting

文件：69.74 Kbytes 页数：3 Pages

ROHM

罗姆

NPN Silicon General Purpose Transistor

FEATURES Low VCE(sat) - VCE(sat) 250mV at IC = 200mA/IB=10mA High Current

文件：135.75 Kbytes 页数：2 Pages

SECOS

喜可士

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

文件：239.3 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)

HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY COLOR TV FOR DIGITAL TV & HDTV HIGH SPEED SWITCHING APPLICATIONS
High Voltage : VCBO= 1700 V
Low Saturation Voltage : VCE (sat)= 3 V (Max.)
High Speed : tf (2) = 0.1µs (Typ.)

文件：239.24 Kbytes 页数：5 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED MESA TYPE ((HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1500 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

文件：222.77 Kbytes 页数：5 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Base Voltage- : VCBO= 1500V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection output applications.

文件：262.33 Kbytes 页数：2 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION)

HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV FOR MULTI−MEDIA & HDTV HIGH SPEED SWITCHING APPLICATIONS ● High Voltage : VCBO = 1700 V ● Low Saturation Voltage : VCE (sat) = 3 V (Max.) ● High Speed : tf (2) = 0.1µs (Typ.)

文件：221.8 Kbytes 页数：5 Pages

TOSHIBA

东芝