丝印：C5591；Package：TOP-3E；Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：49 Kbytes 页数：1 Pages

PANASONIC

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丝印：C5591；Package：TOP-3E；Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：164.86 Kbytes 页数：11 Pages

PANASONIC

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Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：164.86 Kbytes 页数：11 Pages

PANASONIC

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Silicon NPN epitaxial planer type(For DC-DC converter)

For DC-DC converter For various driver circuits ■ Features • Low collector to emitter saturation voltage VCE(sat) , large current capacitance • High-speed switching • Mini type 3-pin package, allowing downsizing and thinning of the equipment. • Complementary pair with 2SA2010

文件：50.67 Kbytes 页数：2 Pages

PANASONIC

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Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 23 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.8 dB typ. at f = 1.8 GHz

文件：176.76 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

文件：89.89 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

文件：53.39 Kbytes 页数：8 Pages

HITACHIHitachi Semiconductor

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Silicon NPN Epitaxial High Frequency Low Noise Amplifier

Features • High gain bandwidth product fT = 24 GHz typ. • High power gain and low noise figure ; PG = 18 dB typ. , NF = 1.2 dB typ. at f = 1.8 GHz

文件：89.89 Kbytes 页数：8 Pages

RENESAS

瑞萨

Silicon NPN triple diffusion mesa type(For horizontal deflection output)

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：54.65 Kbytes 页数：2 Pages

PANASONIC

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Horizontal Deflection Transistor Series for TV

■ Overview Based on accumulated manufacturing technology, these horizontal deflection transistors for TVs offer high performance and compact design. They can also withstand high voltage and maintain low loss. They also have a broad area of safe operation, despite an absolutely minimal chip area w

文件：164.86 Kbytes 页数：11 Pages

PANASONIC

松下