NPN General Purpose Transistor

Features » Consumer electronics « Voltage switching « High Speed Switching

文件：2.16374 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

文件：49.6 Kbytes 页数：5 Pages

SANYO

三洋

DC/DC Converter Applications

DC/DC Converter Applications Features · Adoption of MBIT processes. · Large current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall-sized package permitting applied sets to be made small and slim. · High allowable power dissip

文件：49.94 Kbytes 页数：5 Pages

SANYO

三洋

DC/DC CONVERTER APPLICATIONS

DC/DC CONVERTER APPLICATIONS FEATURES *High current capacitance. *Low collector-to-emitter saturation voltage. *High-speed switching. *High allowable power dissipation. *Complementary to 2SA2016. APPLICATIONS *Relay drivers, lamp drivers, motor drivers, strobes

文件：172.01 Kbytes 页数：4 Pages

UTC

友顺

Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l

文件：359.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

DC/DC Converter Applications

DC / DC Converter Applications Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons •

文件：50.27 Kbytes 页数：5 Pages

SANYO

三洋

Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP

Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation Applicaitons • Relay drivers, l

文件：359.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= 800V(Min) APPLICATIONS ·Designed for power amplifier ·high speed switching and regulated power supply applications.

文件：282.74 Kbytes 页数：2 Pages

ISC

无锡固电

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : VCE (sat) = 3 V (Max.) High Speed : tf (2) = 0.1 µs (Typ.)

文件：243.61 Kbytes 页数：5 Pages

TOSHIBA

东芝

Horizontal Deflection Output Transistor

Horizontal Deflection Output Transistor

文件：71.51 Kbytes 页数：1 Pages

PANASONIC

松下