NPN TRANSISTOR

FEATURES: * High current. * Low VCE(sat). VCE(sat).250mV at IC = 200mA / IB = 10mA

文件：198.29 Kbytes 页数：3 Pages

WEITRON

丝印：BX；Package：SOT-416；Low frequency transistor (12V, 0.5A)

The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA Applications For switching For muting

文件：69.74 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：BX；Package：SOT-523；LOW FREQUENCY TRANSISTOR

FEATURES ● High current. ● Low VCE(sat). Applications ● For switching. ● For muting.

文件：166.7 Kbytes 页数：4 Pages

BILIN

银河微电

SOT-523 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High current. ● Low VCE(sat). VCE(sat)≤250mV at IC = 200mA / IB = 10mA

文件：2.97723 Mbytes 页数：4 Pages

JIANGSU

长电科技

Low Frequency Transistor

Features Hig current. Low VCE(sat):VCE(sat) 250mV at IC=200mA/IB=10mA

文件：35.99 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Silicon General Purpose Transistor

FEATURES • High Current. • Low VCE(sat). VCE(sat)≦0.25V (@IC=200mA / IB=10mA) • Complement of 2SC4738. Application • General Purpose Amplification.

文件：168.08 Kbytes 页数：2 Pages

SECOS

喜可士

NPN Silicon General Purpose Transistor

文件：204.74 Kbytes 页数：2 Pages

SECOS

喜可士

双极型晶体管

Galaxy

银河微电

NPN小信号三极管

CBI

创基电子

晶体管

JSCJ

长晶科技