NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER)

AUDIO POWER AMPLIFIER DC TO DC CONVERTER ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1939

文件：24.41 Kbytes 页数：1 Pages

WINGS

永盛电子

TOSHIBA Transistor Silicon NPN Triple Diffused Type

Power Amplifier Applications • Complementary to 2SA1939 • Suitable for use in 40-W high fidelity audio amplifier’s output stage

文件：191.22 Kbytes 页数：4 Pages

TOSHIBA

东芝

isc Silicon NPN Power Transistor

DESCRIPTION ·Low Collector Saturation Voltage-: VCE(sat)= 2.0V(Min) @IC= 6A ·Good Linearity of hFE ·Complement to Type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage applications

文件：300.66 Kbytes 页数：3 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ··With TO-3P(I) package ·Complement to type 2SA1940 APPLICATIONS ·Power amplifier applications ·Recommend for 55W high fidelity audio frequency amplifier output stage

文件：168.62 Kbytes 页数：4 Pages

SAVANTIC

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • Complementary to 2SA1940 • Suitable for use in 55-W high fidelity audio amplifier’s output stage

文件：147.85 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN TRIPLE DIFFUSED TYPE (POWER AMPLIFIER APPLICATIONS)

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

文件：147.83 Kbytes 页数：2 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

文件：155.2 Kbytes 页数：4 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Power Amplifier Applications

Power Amplifier Applications • High breakdown voltage: VCEO = 140 V (min) • Complementary to 2SA1941 • Suitable for use in 70-W high fidelity audio amplifier’s output stage

文件：155.2 Kbytes 页数：4 Pages

TOSHIBA

东芝