2SC5200-OQ

power amplifier applications

POWERAMPLIFIERAPPLICATIONS •Complementaryto2SA1943 ​​​​​​​•Recommendedfor100WHighFidelityAudioFrequencyAmplifierOutputStage.

2SC5200-O-AB-N-B

Marking：2SC5200；Package：TO-3PB；Silicon NPN Triple Diffused Transistor

2SC5200-O-AL-N-B

Marking：2SC5200；Package：TO-3PL(T)；Silicon NPN Triple Diffused Transistor

2SC5200-O-AL-N-D

Marking：2SC5200；Package：TO-3PL(T)；Silicon NPN Triple Diffused Transistor

2SC5200-O(Q)

Package：TO-3PL；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 230V 15A TO3P

Toshiba Semiconductor and Storage

2SC5200-O(S1,F

Package：TO-3PL；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：PB-F POWER TRANSISTOR TO-3PL PC=

Toshiba Semiconductor and Storage

2SC5200

POWERAMPLIFIERAPPLICATIONSDRIVERSTAGEAMPLIFIER

2SC5200

iscSiliconNPNPowerTransistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=300V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat)=3.0V(Max)@IC=8A APPLICATIONS ·Designedforpoweramplifier,highspeedswitchingand regulatedpowersupplyapplications.

2SC5200

NPNEpitaxialSiliconTransistor

Features •HighCurrentCapability:IC=17A. •HighPowerDissipation:150watts. •HighFrequency:30MHz. •HighVoltage:VCEO=250V •WideS.O.Aforreliableoperation. •ExcellentGainLinearityforlowTHD. •Complementto2SA1943/FJL4215. •ThermalandelectricalSpicemodelsareav

2SC5200

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf