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2SC5192-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61

文件:68.3 Kbytes 页数:10 Pages

NEC

瑞萨

2SC5192-T1

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件:222.65 Kbytes 页数:12 Pages

RENESAS

瑞萨

2SC5192-T2

SILICON TRANSISTOR

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

文件:222.65 Kbytes 页数:12 Pages

RENESAS

瑞萨

2SC5192-T2

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Mini Mold Package EIAJ: SC-61

文件:68.3 Kbytes 页数:10 Pages

NEC

瑞萨

2SC5193

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70

文件:65.19 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5193

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Ma

文件:220.22 Kbytes 页数:9 Pages

RENESAS

瑞萨

2SC5193-T1

NPN SILICON RF TRANSISTOR

NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Ma

文件:220.22 Kbytes 页数:9 Pages

RENESAS

瑞萨

2SC5193-T1

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70

文件:65.19 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5193-T2

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR COMPACT MINI MOLD

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • Compact Mini Mold Package EIAJ: SC-70

文件:65.19 Kbytes 页数:12 Pages

NEC

瑞萨

2SC5194

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

FEATURES • Low Voltage Operation, Low Phase Distortion • Low Noise NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • 4-Pin Compact Mini Mold Package

文件:65.22 Kbytes 页数:10 Pages

NEC

瑞萨

详细参数

  • 型号:

    2SC519

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD

供应商型号品牌批号封装库存备注价格
NEC
24+
SOT323
5000
全现原装公司现货
询价
NEC
2022+
2900
全新原装 货期两周
询价
RENESAS/瑞萨
23+
SOT-323
612000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
NEC
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
23+
TO
20000
正品原装货价格低
询价
NK/南科功率
2025+
SOT-323
986966
国产
询价
RENESAS/瑞萨
2511
SOT-323
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
询价
RENESAS/瑞萨
22+
SOT-323
20000
只做原装
询价
24+
60000
询价
NEC
24+
SOT323
6980
原装现货,可开13%税票
询价
更多2SC519供应商 更新时间2026-1-17 10:19:00