首页 >2SC4226(R24)原装>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

2SC4226

NPNSiliconEpitaxialPlanarTransistor

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC4226

NPNSiliconEpitaxialTransistor

Features ●Lownoiseandhighgain. NF=1.2dBTyp.@VCE=3V,IC=7mA,f=1.0GHz ●Highgain. |S21e|2=9.0dBTYP.@f=1GHz,VCE=3V,IC=7mA

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SC4226

NPNSiliconPlasticEncapsulatedTransistor

FEATURE •The2SC4226isaLowsupplyvoltagetransistor designedforVHF,UHFlownoiseamplifier •Suitableforahighdensitysurfacemountassembly sincethetransistorhasbeenapplied smallminimoldpackage

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC4226

NPNSiliconRFTransistorNPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold

NPNEpitaxialSiliconRFTransistorforHigh-FrequencyLow-NoiseAmplification3-pinsuperMinimold DESCRIPTION TheNE85630/2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier.Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbe

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SC4226

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●Lownoise. ●Highgain. ●Powerdissipation.(PC=150mW) APPLICATIONS ●Highfrequencylownoiseamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

2SC4226

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

2SC4226

2SC4226isanultra-highfrequencylow-noisetransistor,usingplanarNPNsiliconoutside

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

2SC4226

iscSiliconNPNPowerTransistor

DESCRIPTION •LowCollectorCurren-IC=0.1A •LowCollectorPower—Pc=0.1W WithSOT-323Package •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Designedforbroadbandlownoiseamplifier; widebandlownoiseamplifie

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

2SC4226

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SC4226

SiliconTransistor

NPNSILICONEPITAXIALTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINTHIN-TYPESMALLMINIMOLDPACKAGE

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SC4226

HIGHFREQUENCYLOWNOISEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORSUPERMINIMOLD

DESCRIPTION The2SC4226isalowsupplyvoltagetransistordesignedforVHF,UHFlownoiseamplifier. Itissuitableforahighdensitysurfacemountassemblysincethetransistorhasbeenappliedsmallminimoldpackage. FEATURES •LowNoise NF=1.2dBTYP.@f=1GHz,VCE=3V,IC=7

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SC4226A

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

2SC4226B

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

2SC4226C

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

2SC4226D

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

2SC4226E

NPNSILICONRFTRANSISTOR

NPNSILICONRFTRANSISTOR Externalbipolarprocess,withhighpowergainLownoisecharacteristics.Theadoptionofsubmit-niatureSOT-323package,Especiallysuitableforhighdensitysurfacepatchinstallation,mainlyfortheVHF,UHFlownoiseamplifier. Feature Highgain:︱S21e︱2TYP.Va

SKTECHNOLGYSHIKE Electronics

時科广东時科微实业有限公司

2SC4226W

NPNSiliconEpitaxialPlanarTransistor

FEATURES Lownoise. Highgain. Powerdissipation.(PC=150mW) APPLICATIONS Highfrequencylownoiseamplifier.

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

供应商型号品牌批号封装库存备注价格
NEC
23+
BGA
3220
原装正品公司现货价格优惠欢迎查询
询价
长电科技
08+
35000
询价
SOT-323
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC-日本电气
24+25+/26+27+
SOT-323
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
NEC
16+
SOT323
4150
原装现货假一罚十
询价
NEC
22+23+
Sot-323
34275
绝对原装正品全新进口深圳现货
询价
有替换料
23+
SOT323
999999
原装正品现货量大可订货
询价
有替换料
19+
SOT323
20000
1
询价
有替换料
23+
SOT323
20000
原厂原装正品现货
询价
RENESAS/瑞萨
SOT-323
265209
假一罚十原包原标签常备现货!
询价
更多2SC4226(R24)原装供应商 更新时间2024-6-21 14:40:00