2SC4213

NPNEPITAXIALTYPE(FORMUTINGANDSWITCHIGAPPLICATIONS)

ForMutingandSwitchingApplications •Highemitter-basevoltage:VEBO=25V(min) •HighreversehFE:ReversehFE=150(typ.)(VCE=−2V,IC=−4mA) •Lowonresistance:RON=1Ω(typ.)(IB=5mA) •HighDCcurrentgain:hFE=200~1200 •Smallpackage

2SC4213

SiliconNPNEpitaxialType(PCTprocess)ForMutingandSwitchingApplications

2SC4213

SiliconNPNEpitaxial

Features ●Highemitter-basevoltage:VEBO=25V(min). ●HighreversehFE:ReversehFE=150(typ.)(VCE=-2V,IC=-4mA). ●Lowonresistance:RON=1Ù(typ.)(IB=5mA). ●HighDCcurrentgain:hFE=2001200. ●Smallpackage.

2SC4213

ForMutingandSwitchingApplications

2SC4213

ForMutingandSwitchingApplications

2SC4213A

ForMutingandSwitchingApplications

2SC4213-B

ForMutingandSwitchingApplications