NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION The 2SD999 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits.

文件：222.64 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

文件：351.15 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN Silicon Epitaxial Transistor

FEATURES ● Low Collector Saturation Voltage: VCE(sat)

文件：488.86 Kbytes 页数：5 Pages

BILIN

银河微电

TRANSISTOR(NPN)

FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity

文件：343.46 Kbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low Collector-Emitter Saturation Voltage ● Mini Power Type Package ● Excellent DC Current Gain Linearity

文件：1.19082 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN Silicon Epitaxial Transistor

Features ● World standard miniature package:SOT-89. ● Low collector saturation voltage. ● Excellent dc current gain linearity.

文件：51.25 Kbytes 页数：1 Pages

KEXIN

科信电子

丝印：CM；Package：SOT-89；NPN Silicon Epitaxial Transistor

FEATURES Low Collector Saturation Voltage: VCE(sat)

文件：814.42 Kbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 0.5 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：188.03 Kbytes 页数：2 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a SOT-89 Plastic Package

Descriptions Silicon NPN transistor in a SOT-89 Plastic Package. Features Low VCE(sat), excellent hFE linearity, complements the 2SB798. Applications Audio frequency power amplifier applications.

文件：1.26575 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子

普通三极管

FOSAN

富信半导体