NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

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NEC

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NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION The NE68519 / 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direc

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NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：241.06 Kbytes 页数：12 Pages

RENESAS

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Small Signal Silicon Bipolars

NPN Silicon Amplifier and Oscillator Transistor (Same as NE68519)

Renesas

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：241.06 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride

文件：61.48 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

文件：241.06 Kbytes 页数：12 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DESCRIPTION\nThe 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range and excellent linearity. This is achieved by direct nitride pa • Low Voltage Use.\n• High fT : 12.0 GHz TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)\n• Low Cre : 0.4 pF TYP. (@ VCE= 3 V, IE= 0, f = 1 MHz)\n• Low NF : 1.5 dB TYP. (@ VCE= 3 V, IC= 3 mA, f = 2 GHz)\n• High |S21e|2: 8.5 dB TYP. (@ VCE= 3 V, IC= 10 mA, f = 2 GHz)\n• Ultra Super Mini Mold Package.;

Renesas

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Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 6V 12GHZ SOT523

CEL

Package：SOT-523；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 6V 12GHZ SOT523

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