Transistors (Selection Guide by Applications and Functions)

● High Speed Switch • VCO and High Frequency Type ● High Frequency Amplifiers and Others ● High Frequency Silicon Transistors for Transmitters

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PANASONIC

松下

Silicon NPN Triple Diffused

Features • High breakdown voltage V(BR)CEO= 1500 V Min Application High voltage amplifier

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HITACHIHitachi Semiconductor

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Silicon NPN Triple Diffused

Features • High breakdown voltage V(BR)CEO= 1500 V Min Application High voltage amplifier

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RENESAS

瑞萨

High frequency amplifier

Features • Excellent high frequency characteristics fT = 1000 MHz typ • High breakdown voltage and low output capacitance VCEO = 100 V, Cob = 4.5 pF typ • Suitable for wide band video amplifier Application High frequency amplifier

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HITACHIHitachi Semiconductor

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High frequency amplifier

Features • Excellent high frequency characteristics fT = 1.2 GHz typ • Low output capacitance Cob = 5.0 pF typ Application High frequency amplifier

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HITACHIHitachi Semiconductor

日立日立公司

Silicon PNP epitaxial planer type

Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SC5026 ■ Features • Low collector-emitter saturation voltage VCE(sat) • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic ins

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PANASONIC

松下

Silicon NPN epitaxial planer type(For low-frequency output amplification)

Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SA1890 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● High collector to emitter voltage VCEO. ● Mini Power type package, allowing downsizing of the equipment and automatic ins

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PANASONIC

松下

Silicon NPN Epitaxial Planar Type

Features ● Low collector-emitter saturation voltage VCE(sat). ● High collector-emitter voltage (Base open) VCEO ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

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KEXIN

科信电子

High Switching Speed

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·High Switching Speed ·Wide SOA

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ISC

无锡固电

Silicon NPN triple diffusion planar transistor

FEATURES • High-speed switching • High breakdown voltage and high reliability • Wide SOA (Safe Operation Area) • TO-220 package which can be installed to the heat sink with one screw APPLICATIONS • Switching regulator and general purpose

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NELLSEMI

尼尔半导体