| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2SD669 | Silicon NPN Epitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP) | HitachiHitachi, Ltd. 日立公司 |  | |
2SD669 | NPN Epitaxial Planar Transistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 |  | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR NPNSILICONTRANSISTOR APPLICATIONS *LowfrequencypoweramplifiercomplementarypairwithUTC2SB649/A | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
2SD669 | Plastic-Encapsulated Transistors TRANSISTOR(NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited |  | |
2SD669 | Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. |  | |
2SD669 | NPN Silicon Plastic-Encapsulate Transistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V • | MCCMicro Commercial Components 美微科美微科半导体公司 |  | |
2SD669 | Silicon NPN transistor in a TO-126 Plastic Package. Descriptions SiliconNPNtransistorinaTO-126PlasticPackage. Features Complementarypairwith2SB649(A). Applications Lowfrequencypoweramplifier. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 |  | |
2SD669 | NPN Type Plastic Encapsulate Transistors FEATURES PowerdissipationPCM:1mW（Tamb=25℃） CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V Collector-emittervoltageVCEO2SD669:120V2SD669A:160V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | SECOS SeCoS Halbleitertechnologie GmbH |  | |
2SD669 | TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd |  | |
2SD669 | TRANSISTOR (NPN) FEATURES PowerdissipationPCM:1W(Tamb=25℃) CollectorcurrentICM:1.5A Collector-basevoltageV(BR)CBO:180V OperatingandstoragejunctiontemperaturerangeTJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 |  | |
2SD669 | TRANSISTOR (NPN) TRANSISTOR(NPN) FEATURES Lowfrequencypoweramplifiercomplementarypair with2SB649/A | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. |  | |
2SD669 | TO-252-2L Plastic-Encapsulate Transistors FEATURES LowFrequencyPowerAmplifierComplementary Pairwith2SB649 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | |
2SD669 | isc Silicon NPN Power Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
2SD669 | BIPOLAR POWER GENERAL PURPOSE TRANSISTOR | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | |
Silicon NPN Epitaxial Application Lowfrequencypoweramplifiercomplementarypairwith2SB649/A(PNP) | HitachiHitachi, Ltd. 日立公司 | | ||
NPN Epitaxial Planar Transistors NPNEpitaxialPlanarTransistors P/bLead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | | ||
Silicon NPN Power Transistors DESCRIPTION ·WithTO-126package ·Complementtotype2SB649/649A(PNP) ·HighbreakdownvoltageVCEO:120/160V ·Highcurrent1.5A ·Lowsaturationvoltage,excellenthFElinearity APPLICATIONS ·Forlow-frequencypower amplifierapplications | SAVANTIC Savantic, Inc. | | ||
TO-126 Plastic-Encapsulate Transistors TRANSISTOR(NPN) FEATURES ●LowFrequencyPowerAmplifierComplementaryPairwith2SB649/2SB649A | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | | ||
NPN Silicon Plastic-Encapsulate Transistor Features •LeadFreeFinish/RoHSCompliant(Note1)(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 •Capableof1WattsofPowerDissipation. •Collector-current1.5A •Collector-baseVoltage180V • | MCCMicro Commercial Components 美微科美微科半导体公司 | |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-NPN
- 性质：
低频或音频放大 （LF）_开关管 （S）_视频输出 （Vi
- 封装形式：
直插封装
- 极限工作电压：
180V
- 最大电流允许值：
1.5A
- 最大工作频率：
140MHZ
- 引脚数：
3
- 可代换的型号：
2SC3117,
- 最大耗散功率：
20W
- 放大倍数：
- 图片代号：
B-21
- vtest：
180
- htest：
140000000
- atest：
1.5
- wtest：
20
详细参数
- 型号：
2SD669
- 制造商：
HITACHI
- 制造商全称：
Hitachi Semiconductor
- 功能描述：
Silicon NPN Epitaxial
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
23+ |
TO-126 |
9896 |
询价 | |||
HIT |
2017+ |
TO126 |
32568 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
HIT |
17+ |
TO126 |
6200 |
100%原装正品现货 |
询价 | ||
HIT |
2020+ |
TO-126 |
2300 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
HIT |
09+ |
TO-92 |
20000 |
询价 | |||
HIT日立 |
23+ |
TO-126 |
5000 |
原装正品,假一罚十 |
询价 | ||
HIT |
12+ |
TO-252 |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
HIT |
19+ |
TO-126 |
59424 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
ST |
23+ |
SOP |
30000 |
全新原装假一赔十 |
询价 |
