丝印：L4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：2.34324 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

文件：577.82 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

文件：190.94 Kbytes 页数：2 Pages

HOTTECH

合科泰

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA ● High voltage:VCEO=50V

文件：2.39104 Mbytes 页数：4 Pages

HDSEMI

海德半导体

丝印：L4；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V

文件：557.06 Kbytes 页数：3 Pages

UMW

友台半导体

Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：67.21 Kbytes 页数：1 Pages

TEL

NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V SILICON TRANSISTOR

文件：301.03 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.

文件：152.4 Kbytes 页数：2 Pages

SECOS

喜可士

General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

文件：522.429 Kbytes 页数：5 Pages

COMCHIP

典琦

NPN Epitaxial Planar Transistor

FEATURE • High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. • High Voltage : VCEO=50V.

文件：284.39 Kbytes 页数：3 Pages

SECOS

喜可士