NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V SILICON TRANSISTOR

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RENESAS

瑞萨

Transistor-Bipolar Small Signal Transistors

Renesas

瑞萨

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623F is designed for use driver stage of AF amplifier and general purpose application.

文件：152.4 Kbytes 页数：2 Pages

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General Purpose Transistors

Features - Epoxy meets UL-94 V-0 flammability rating. - Surface mount package ideally suited for automatic insertion.

文件：522.429 Kbytes 页数：5 Pages

COMCHIP

典琦

NPN Epitaxial Planar Transistor

FEATURE • High DC current gain :hFE=200(Typ), VCE=6V, IC=1mA. • High Voltage : VCEO=50V.

文件：284.39 Kbytes 页数：3 Pages

SECOS

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