丝印：L4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：203.59 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：L4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：2.34324 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：L4；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES * High DC current gain :hFE=200(Typ) VCE=6V,IC=1mA * High voltage:VCEO=50V

文件：557.06 Kbytes 页数：3 Pages

UMW

友台半导体

丝印：L4；Package：SOT-23；NPN Transistors

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

文件：577.82 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：L4；Package：SOT-323；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE=200TYP. ● High voltage: VCEO=50V. ● Power dissipation.(PC=200mW) APPLICATIONS ● Audio frequency general purpose amplifier.

文件：193.08 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：L4；Package：SOT-323；NPN Plastic-Encapsulate Transistors

FEATURES • High DC Current Gain • Complementary to 2SA1611 • High Voltage APPLICATIONS • General Purpose Amplification

文件：681.24 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：L4；Package：SOD-123S；0.5A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：90.09 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：90.96 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：90.96 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技